NTMFS4923NE
Power MOSFET
30 V, 91 A, Single N ? Channel, SO ? 8 FL
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? Dual Sided Cooling Capability
? These Devices are Pb ? Free, Halogen Free and are RoHS Compliant
Applications
? CPU Power Delivery, DC ? DC Converters
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
3.3 m W @ 10 V
4.8 m W @ 4.5 V
D (5,6)
I D MAX
91 A
75 A
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
30
± 20
Unit
V
V
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
I D
P D
21.4
13.5
2.63
A
W
G (4)
S (1,2,3)
N ? CHANNEL MOSFET
Continuous Drain
Current R q JA ≤
10 s (Note 1)
Power Dissipation
R q JA ≤ 10 s
(Note 1)
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Steady
State
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
I D
P D
I D
P D
38.8
24.5
8.7
12.7
8.0
0.93
A
W
A
W
1
SO ? 8 FLAT LEAD
CASE 488AA
STYLE 1
S
S
S
G
MARKING
DIAGRAM
D
4923NE
AYWZZ
D
D
D
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
R q JC (Note 1)
Pulsed Drain
Current
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
T A = 25 ° C, t p = 10 m s
I D
P D
I DM
91
66
48
275
A
W
A
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Current Limited by Package
T A = 25 ° C
I Dmax
100
A
ORDERING INFORMATION
Operating Junction and Storage T J , ? 40 to ° C
Temperature T STG +150
Source Current (Body Diode) I S 44 A
Drain to Source DV/DT dV/d t 6 V/ns
Single Pulse Drain ? to ? Source Avalanche E AS 110 mJ
Energy T J = 25 ° C, V DD = 24 V, V GS = 10 V,
I L = 47 A pk , L = 0.1 mH, R G = 25 W
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
Device Package Shipping ?
NTMFS4923NET1G SO ? 8 FL 1500 /
(Pb ? Free) Tape & Reel
NTMFS4923NET3G SO ? 8 FL 5000 /
(Pb ? Free) Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
May, 2012 ? Rev. 1
1
Publication Order Number:
NTMFS4923NE/D
相关PDF资料
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相关代理商/技术参数
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NTMFS4925NT3G 功能描述:MOSFET TRENCH 3.1 30V 6 Ohm NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4926N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 44 A, Single Na??Channel, SOa??8 FL
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